| PART |
Description |
Maker |
| BU407D BU408D BU406D |
POWER TRANSISTORS(7A,150-200V,60W) 功率晶体管（7A150 - 200V的电压，60瓦）
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| APT20M38SVR APT20M38SVRG |
200V 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| IRF640 IRF640FP |
N-CHANNEL 200V - 0.150 OHM - 18A TO-220/TO-220FP MESH OVERLAY MOSFET
|
ST Microelectronics
|
| IRF9630S IRF9630STRL IRF9630STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-6.5A)
|
IRF[International Rectifier]
|
| MJE15030 MJE15031 MJE15029 MJE15028 ON2012 |
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS 8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
SEMICONDUCTOR TECHNICAL DATA
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| IRFU9220 IRFR9220 IRFR9220TRR IRFR9220PBF IRFR9220 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)
3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
VISHAY INTERTECHNOLOGY INC
|
| MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
|
IRF[International Rectifier]
|
